Stacking driven Raman spectra change of carbon based 2D semiconductor C3N
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Title
Stacking driven Raman spectra change of carbon based 2D semiconductor C3N
Authors
Keywords
C, 3, N, Raman spectrum, Carbon based semiconductor, 2D materials, Stacking structure
Journal
CHINESE CHEMICAL LETTERS
Volume -, Issue -, Pages -
Publisher
Elsevier BV
Online
2021-10-04
DOI
10.1016/j.cclet.2021.09.098
References
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