Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications

Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications

(2020) Nisha Chugh et al.   MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps

(2019) Nisha Chugh et al.   MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications

(2019) Nisha Chugh et al.   SEMICONDUCTORS

Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

(2018) Nisha Chugh et al.   Journal of Computational Electronics

TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

(2018) Qingzhi Meng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band

(2017) M. Micovic et al.   IEEE ELECTRON DEVICE LETTERS

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

(2017) Nandha Kumar Subramani et al.   IEEE Journal of the Electron Devices Society

Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer

(2015) F. Benkhelifa et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

(2013) Huolin Huang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

(2012) Diego Marti et al.   IEEE ELECTRON DEVICE LETTERS

Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

(2012) A. Kamath et al.   IEEE ELECTRON DEVICE LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon withFT= 143 GHz

(2010) Haifeng Sun et al.   Applied Physics Express