Article
Physics, Applied
Sheng Cheng, Lvkang Shen, Shaodong Cheng, Chunrui Ma, Ming Liu, Tao Zhu
Summary: This work investigates the resistive switching and electrical-control of magnetization in Pt/CoFe2O4/Nb:SrTiO3 heterostructures. The films exhibit a classic bipolar resistive switching effect and good anti-fatigue performance. The study reveals that the interfacial migration of oxygen vacancies plays an important role in modulating the resistive and magnetic properties in CoFe2O4 resistive switching devices.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Tingting Guo, Huixiang Huang, Xianglin Huang, Ying Wang, Li Duan, Zhuo Xu
Summary: The coexistence of resistive switching and magnetism modulation of Co-doped HfOx samples with different doping concentrations is reported in this study. The influence of Co dopants on resistive switching and magnetism is analyzed experimentally and theoretically. The results show that Co doping can improve the switching performance and the Co-doped HfOx samples exhibit different magnetism properties in different resistance states.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Karuna Kumari, Ajay D. Thakur, S. J. Ray
Summary: This study investigates the structural, charge transport, and current-voltage (I-V) behavior of (1-x)La0.7Sr0.3MnO3.(x)ZnO composite systems. The results show that these composites exhibit bipolar resistive switching behavior, and the oxygen-deficient region increases with increasing ZnO concentration.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Mingkai Tang, Liyufen Dai, Mingqiang Cheng, Yuan Zhang, Yanghe Wang, Xiangli Zhong, Jinbin Wang, Feng An, Ming Ma, Mingqiang Huang, Changjian Li, Jiangyu Li, Gaokuo Zhong
Summary: This article proposes a synthesis strategy based on high-throughput pulsed laser deposition technology to precisely control the thickness of oxide thin films. With this method, STO thin films with different thicknesses were successfully synthesized, and a transition from unipolar to bipolar resistive switching mode was observed as the film thickness increased. The STO thin film with a thickness of 20.3 nm exhibited excellent conductance modulation properties under the application of electrical pulses as well as significant reliability for emulating various synaptic functions, making it a promising material for artificial neuromorphic computing applications.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Ceramics
Faisal Alresheedi
Summary: Resistive random-access memories are attractive for next-generation non-volatile memories due to their simple structure, fast response, and low power consumption. This study fabricated one-dimensional TiO2 nanorods and evaluated their resistive switching characteristics. The nanocomposite device with embedded SnO2 nanoparticles exhibited superior switching performance and additional features of multilevel data storage.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Physical
Zicong Guo, Yuanyuan Zhu, Jing Zhou, Xiaoyu Ma, Lixin Wang, Mengyao Chen, Yong Liu, Rui Xiong, Ziyu Wang, Chao Zuo, Hongjun Wang
Summary: Yttrium oxide (Y2O3) has been investigated as a functional material for resistive switching memories. However, there is a lack of understanding regarding the tuning of oxygen vacancies by various electrodes in Y2O3-based memories. In this study, non-crystalline Y2O3 films prepared through magnetron sputtering deposition were used to construct resistive switching memory devices with different structures. The devices exhibited nonvolatile bipolar resistive switching behaviors, which were dependent on the formation/rupture of conductive filaments composed of oxygen vacancies. The Y2O3-based memories with Pt/Y2O3/Pt structure showed competitive switching properties, including ultra-low set/reset voltages and high retention characteristics. The influence of different electrodes on oxygen vacancies and the morphologies of conductive filaments were discussed in detail. Additionally, physical models were proposed to clarify carrier transport mechanisms and switching behaviors for memories with different structures.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Engineering, Electrical & Electronic
Yoandris Gonzalez, Azza Hadj Youssef, Rajesh Katoch, Andreas Dorfler, Siavash Asadollahi, Andranik Sarkissian, Andreas Ruediger
Summary: The effect of oxygen deficiency in Hf0.5Zr0.5O2-delta thin films on the switching dynamics and charge transport mechanism of a device was studied. Bipolar resistive switching behavior was observed, and different conduction mechanisms were identified.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
He-Chun Zhou, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang
Summary: This study successfully applied Bi4Ti3O12 (BIT) ferroelectric films to the RS layers of memristors, demonstrating repeatable and stable bipolar resistive switching (RS) characteristics closely related to oxygen vacancies.
Article
Materials Science, Ceramics
Lun-Quan Wang, Wen-Hua Li, Xin-Gui Tang, Xiao-Bin Guo, Qiu-Xiang Liu, Yan-Ping Jiang, Zhen-Hua Tang
Summary: This study successfully fabricated PbZrO3 (PZO) films on a LaNiO3 (LNO)-buffered Si(100) substrate using a sol-gel spin-coating technique, and demonstrated excellent bipolar resistance switching (RS) behavior in the resulting Au/PZO/LNO/Si heterojunction device. The device showed a high/low resistance ratio of 10^2 at bias voltages of +0.2 and -0.2 V, with RS characteristics remaining stable after 100 consecutive cycles of testing. Weibull distribution analysis indicated a uniform and stable high/low-resistance state, and conduction mechanisms were identified as Ohmic conduction and Schottky emission, with the RS phenomenon attributed to modulation of a Schottky-like barrier due to oxygen vacancy migration in the PZO films.
CERAMICS INTERNATIONAL
(2021)
Article
Chemistry, Physical
Jia-Jin Lu, Xin-Gui Tang, Wen -Min Zhong, Yan-Ping Jiang, Qiu-Xiang Liu
Summary: To solve the problem of information storage, a resistive variable memory of Au/Bi2Ti2O7/NiO/ITO was fabricated and its resistive switching characteristics were studied. The device showed diode-like rectifier characteristics and exhibited good durability and stability under 100 cycles of read-and-write tests. At a reading voltage of 0.44 V, the resistive switching ratio of the device reached 102. Combining XPS O 1s spectrum and further analysis of I-V double logarithmic curve, it was found that the conduction mechanism of the device was mainly related to the ohmic conduction mechanism and the space charge limiting current mechanism, and its resistive switching behavior was related to the migration of oxygen vacancies to change the interface barrier.
SURFACES AND INTERFACES
(2023)
Article
Multidisciplinary Sciences
Senad Bulja, Rose Kopf, Al Tate, Mark Cappuzzo, Dmitry Kozlov, Holger Claussen, Dirk Wiegner, Wolfgang Templ, Dariush Mirshekar-Syahkal
Summary: Resistive switching (RS) of Transition Metal Oxides (TMOs) is a promising option for the development of next generation memory and 6G wireless communication technologies. The exact mechanism of RS is not yet fully understood, but it is believed to involve the formation and rupture of conductive filaments in the oxide materials. The study reveals the differences in switching behavior and resistance between amorphous TiO2 and NiO, with TiO2 showing superior high frequency characteristics. These findings are important for understanding the conduction mechanism in binary/multinary oxides and enabling their use in non-volatile memory and 6G applications.
SCIENTIFIC REPORTS
(2022)
Article
Chemistry, Analytical
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun
Summary: This paper analyzes the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device. The W/TiO2/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (R-HRS/R-LRS) of about two orders of magnitude. The conduction behaviors of the W/TiO2/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the R-HRS/R-LRS of the W/TiO2/FTO memory device is obviously increased from about two orders of magnitude to three orders of magnitude after the rapid nitrogen annealing treatment. In addition, the change in the W/TiO2 Schottky barrier depletion layer thickness and barrier height modified by the oxygen vacancies at the W/TiO2 interface is suggested to be responsible for the resistive switching characteristics of the W/TiO2/FTO memory device. This work demonstrates the potential applications of the rutile TiO2 nanowire-based W/TiO2/FTO memory device for high-density data storage in nonvolatile memory devices.
Article
Physics, Applied
Nareg Ghazikhanian, Javier del Valle, Pavel Salev, Ralph El Hage, Yoav Kalcheim, Coline Adda, Ivan K. Schuller
Summary: Materials displaying resistive switching can be controlled through focused ion beam irradiation, leading to reduced power consumption and improved control in neuromorphic computing applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Yong Zhang, Ming Liu, Chunrui Ma, Lu Lu, Chuan Yu Han
Summary: The concentration and distribution of oxygen vacancies play a crucial role in the performance of oxide materials. This study presents a strategy to control oxygen vacancy doping and discovers the phenomenon of bipolar resistive switching. By utilizing electrochemical migration and oxygen ion redistribution, the control of oxygen vacancies is achieved.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Chemistry, Physical
Fei Jin, Duojie Wu, Yani Lu, Zizhao Pan, Meng Gu, Hong Wang
Summary: In this work, oxygen vacancy-regulated La0.7Ca0.3MnO3-delta:Ag (LCMO:A) nanocomposite thin films were synthesized and investigated for their high temperature coefficient of resistance (TCR) values. The effects of oxygen pressures on the lattice parameter, T-p value, and Mn4+ concentration in the films were studied. The LCMO:A nanocomposite thin film prepared with optimal oxygen pressures exhibited a record high TCR value of approximately 37% K-1, making it a promising candidate for applications in bolometers.
JOURNAL OF MATERIOMICS
(2022)
Article
Nanoscience & Nanotechnology
Min-Han Lee, Yoav Kalcheim, Javier del Valle, Ivan K. Schuller
Summary: The study demonstrates a high-vacuum gas evolution technique to precisely control oxygen concentrations in VOX thin films. Through detailed structural investigations, optimal stoichiometry is achieved and stabilized. This technique provides new pathways to strategically tune the oxygen stoichiometry in complex oxides and offers insights into the phase stability of VOX thin films.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Multidisciplinary Sciences
Shaobo Cheng, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier Del Valle, R. C. Dynes, Marcelo J. Rozenberg, Ivan K. Schuller, Yimei Zhu
Summary: Vanadium dioxide (VO2) is capable of metal-insulator transition and resistive switching, making it suitable for neuromorphic computing hardware. This study reveals the mechanisms of both volatile and nonvolatile switching in VO2, which can emulate neuronal and synaptic behaviors, respectively, providing a comprehensive understanding of resistive switching crucial for neuromorphic computing development.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2021)
Article
Physics, Applied
H. Navarro, J. del Valle, Y. Kalcheim, N. M. Vargas, C. Adda, M. -H. Lee, P. Lapa, A. Rivera-Calzada, I. A. Zaluzhnyy, E. Qiu, O. Shpyrko, M. Rozenberg, A. Frano, Ivan K. Schuller
Summary: The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a goal of modern condensed matter physics, but is limited by intrinsic material properties. A Mott metal-insulator transition can be controlled by doping etc., but not solely by light.
APPLIED PHYSICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Sangheon Oh, Yuhan Shi, Javier del Valle, Pavel Salev, Yichen Lu, Zhisheng Huang, Yoav Kalcheim, Ivan K. Schuller, Duygu Kuzum
Summary: The research introduces an energy-efficient and compact Mott activation neuron based on vanadium dioxide, successfully integrated with a CBRAM crossbar array to achieve efficient in-memory computing. The Mott activation neuron outperforms analogue complementary metal-oxide semiconductor implementations and enables the implementation of activation functions in neural networks.
NATURE NANOTECHNOLOGY
(2021)
Article
Nanoscience & Nanotechnology
Alberto Rivera-Calzada, Fernando Gallego, Yoav Kalcheim, Pavel Salev, Javier del Valle, Isabel Tenreiro, Carlos Leon, Jacobo Santamaria, Ivan K. Schuller
Summary: Non-volatile memories and memristors are desirable for their fast and non-destructive read out of resistive state. Ferroelectric tunnel junctions (FTJs) with high resistive state ratios are promising for neuromorphic computing. A novel approach utilizing a Schottky barrier for optical sensing of resistive state in FTJs is presented, enabling optical detection of resistive state changes.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Anatoly G. Shabalin, Oleg G. Shpyrko
Summary: In materials with unit-cell configuration variations, a solution to reliably determine the strain field is proposed by combining Bragg CDI and multiwavelength anomalous diffraction. This approach separates the contributions of lattice deformation and structure factor, allowing for simultaneous probing of strain and displacement in materials like ferroelectrics. The method opens up an opportunity for nanoscale-resolved 3D mapping of polarization domains in micro- and nanocrystals using coherent X-ray diffraction.
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES
(2021)
Article
Chemistry, Multidisciplinary
Javier del Valle, Pavel Salev, Stefano Gariglio, Yoav Kalcheim, Ivan K. Schuller, Jean-Marc Triscone
Summary: Probabilistic computing is a paradigm that represents data using the probability of a metastable bit being in a certain state. This technology has previously been limited by available hardware, but this study shows that metal-insulator transitions can also generate random sequences. By using an electrical pump/probe protocol and a simple latch circuit, a random stream of 1s and 0s can be obtained.
Article
Physics, Applied
Rodolfo Rocco, Javier del Valle, Henry Navarro, Pavel Salev, Ivan K. Schuller, Marcelo Rozenberg
Summary: Mott materials allow the development of compact and power-efficient neuromorphic devices known as Mott neurons. However, the nature of the insulator-to-metal transition and the determination of the threshold voltage needed for the transition have not been fully understood. In this study, numerical simulations and experiments are used to investigate the filament incubation and formation process. The results show that both electronic and thermal effects contribute to filamentary growth, and the percolation of metallic filaments near the threshold exhibits stochastic behavior.
PHYSICAL REVIEW APPLIED
(2022)
Article
Chemistry, Multidisciplinary
Eti Barazani, Dip Das, Chubin Huang, Abhishek Rakshit, Cecile Saguy, Pavel Salev, Javier del Valle, Maytal Caspary Toroker, Ivan K. K. Schuller, Yoav Kalcheim
Summary: The effects of strain on the metal-insulator phase transitions in V2O3 are explored. It is found that the expansion of the ab-plane is crucial for inducing negative pressure effects in the films. The findings provide insights into manipulating a Mott transition in V2O3 and expanding its potential applications in electronics.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Nareg Ghazikhanian, Javier del Valle, Pavel Salev, Ralph El Hage, Yoav Kalcheim, Coline Adda, Ivan K. Schuller
Summary: Materials displaying resistive switching can be controlled through focused ion beam irradiation, leading to reduced power consumption and improved control in neuromorphic computing applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Carl Willem Rischau, Xu He, Giacomo Mazza, Stefano Gariglio, Jean-Marc Triscone, Philippe Ghosez, Javier del Valle
Summary: We investigated the effects of oxygen isotope on the metal-insulator transition of VO2. By synthesizing V16 O2 and V18 O2 crystals using an alternative method, we observed a 1%-3% phonon softening and a 1.3 K increase in the metal-insulator transition temperature for V18 O2. Calculation and density functional theory confirmed that this shift is due to changes in the lattice internal energy. Our findings highlight the importance of lattice dynamics in determining the electronic transition temperature and the strong coupling between electronic and structural degrees of freedom at the transition.
Article
Physics, Multidisciplinary
Theodor Luibrand, Adrien Bercher, Rodolfo Rocco, Farnaz Tahouni-Bonab, Lucia Varbaro, Carl Willem Rischau, Claribel Dominguez, Yixi Zhou, Weiwei Luo, Soumen Bag, Lorenzo Fratino, Reinhold Kleiner, Stefano Gariglio, Dieter Koelle, Jean-Marc Triscone, Marcelo J. Rozenberg, Alexey B. Kuzmenko, Stefan Guenon, Javier del Valle
Summary: Some correlated materials exhibit an insulator-to-metal transition with increasing temperature, which can also be induced electrically. This transition results in volatile resistive switching due to the formation of conducting filaments. Despite attracting significant attention, there remain unresolved fundamental questions, including the characteristic lengths of these filaments and their impact on switching properties. Through the use of wide-field and scattering-type scanning near-field optical microscopies, filament formation in NdNiO3 and SmNiO3 thin films are characterized. It is observed that smaller filaments increase current density, leading to sharper switching and larger resistive drops. Numerical simulations are employed to discuss the parameters governing filament width and switching properties.
PHYSICAL REVIEW RESEARCH
(2023)
Article
Materials Science, Multidisciplinary
James Wampler, Nelson Hua, Roopali Kukreja, Juan Gabriel Ramirez, Ali C. Basaran, Eric E. Fullerton, Oleg Shpyrko, Ivan K. Schuller
Summary: Low-field microwave absorption techniques are sensitive and nondestructive methods for probing electric and magnetic properties of solids. A technique involving magnetic hysteresis loops and magnetoresistance measurements is presented to investigate the electric and magnetic properties of a sample with complex electromagnetic responses. The technique can be applied to analyze MFMMS signals of magnetite, providing insights into its electric, magnetic, and structural phase transitions.
Article
Materials Science, Multidisciplinary
Javier del Valle, Rodolfo Rocco, Claribel Dominguez, Jennifer Fowlie, Stefano Gariglio, Marcelo J. Rozenberg, Jean-Marc Triscone
Summary: The study investigates the electrically induced insulator-to-metal transition in rare-earth nickelates by comparing the time-dependent transport properties of two distinct members. Stark differences in the nucleation and growth of the metallic phase were observed, with NdNiO3 evolving more rapidly. The amplitude of the resistivity change across the transition was identified as the key parameter controlling the switching speed, contributing to a unified vision of the field-induced transition dynamics across correlated oxides families.
Article
Chemistry, Multidisciplinary
Javier del Valle, Pavel Salev, Stefano Gariglio, Yoav Kalcheim, Ivan K. Schuller, Jean-Marc Triscone
Summary: Probabilistic computing is a new computing paradigm where data is represented by the probability of a metastable bit being in a particular state. Metal-insulator transitions can be used to generate random digital sequences, which can be controlled by inducing random metallization events in VO2. By using an electrical pump/probe protocol and a simple latch circuit, a true stochastic digital sequence can be achieved.