Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

标题
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
作者
关键词
-
出版物
NANO LETTERS
Volume 21, Issue 1, Pages 500-506
出版商
American Chemical Society (ACS)
发表日期
2020-12-29
DOI
10.1021/acs.nanolett.0c03967

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