Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances

(2020) Jun Hyeok Jung et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure

(2019) Ajay Kumar Visvkarma et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reduction of Drain Induced Barrier Lowering in Dual Metal-Hetero Dielectric Gate all around FET for RF Applications

(2019) Amit Kumar et al.   IET Circuits Devices & Systems

InAlN/GaN HEMTs on Si With High $f_{\text {T}}$ of 250 GHz

(2018) Weichuan Xing et al.   IEEE ELECTRON DEVICE LETTERS

Surface Potential Modeling of Graded-Channel Gate-Stack (GCGS) High-K Dielectric Dual-Material Double-Gate (DMDG) MOSFET and Analog/RF Performance Study

(2018) Vadthiya Narendar et al.   Silicon

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

(2017) William M. Waller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical Surface Potential and Drain Current Models of Dual-Metal-Gate Double-Gate Tunnel-FETs

(2016) Vishwa Prabhat et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2012) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications

(2012) Tatsuya Yamada et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications

(2011) Priyanka Malik et al.   MICROELECTRONICS RELIABILITY

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

(2010) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications

(2009) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Dual Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part I: Impact of Gate Metal Workfunction Engineering

(2008) Poonam Kasturi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES