4.3 Article

Electrical switching of valley polarization in monolayer semiconductors

Journal

PHYSICAL REVIEW MATERIALS
Volume 4, Issue 10, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.4.104005

Keywords

-

Funding

  1. Air Force Office of Scientific Research [FA9550-18-1-0480]
  2. National Science Foundation [DMR-1807810]
  3. Cornell Center for Materials Research
  4. NSF MRSEC program [DMR-1719875]
  5. Elemental Strategy Initiative of MEXT, Japan
  6. CREST, JST [JPMJCR15F3]

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Achieving on-demand control of the valley degree of freedom is essential for valley-based information science and technology. Optical and magnetic control of the valley degree of freedom in monolayer transition-metal dichalcogenide (TMD) semiconductors has been studied extensively. However, electrical control of the valley polarization has remained a challenge. Here we demonstrate switching of the valley polarization in monolayer WSe2 by electrical gating. This is achieved by coupling a WSe2 monolayer to a two-dimensional (2D) layered magnetic insulator CrI3. The valley degeneracy in WSe2 is lifted by the magnetic proximity effect. The valley polarization is switched through gate control of the interlayer spin-flip transition in 2D CrI3, which switches the magnetization of the CrI3 layer adjacent to the WSe2 layer. The effect is manifested by a sign change in the photoluminescence handedness of WSe2. Our results provide the basis for high-speed and energy-efficient gate control of the valley degree of freedom in monolayer TMD semiconductors.

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