Journal
NATURE NANOTECHNOLOGY
Volume 17, Issue 7, Pages 686-695Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41565-022-01165-6
Keywords
-
Funding
- US Office of Naval Research [N00014-21-1-2471]
- National Science Foundation (NSF) [DMR- 2114535]
Ask authors/readers for more resources
This article elaborates on the recent developments and future opportunities and challenges in fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides.
This Review elaborates on the recent developments and the future opportunities and challenges of fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Moire materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moire excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moire materials.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available