Journal
ELECTRONICS
Volume 9, Issue 9, Pages -Publisher
MDPI
DOI: 10.3390/electronics9091342
Keywords
GaN; crystal growth; ammonothermal method; HVPE
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Funding
- TEAM TECH program of the Foundation for Polish Science - European Union under the European Regional Development Fund [POIR.04.04.00-00-5CEB/17-00]
- Polish National Science Center [2018/29/B/ST5/00338]
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Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.
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