Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition

Tuning the radial structure of core–shell silicon carbide nanowires

(2015) M. Negri et al.   CRYSTENGCOMM

Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates

(2013) Matteo Bosi et al.   JOURNAL OF CRYSTAL GROWTH

Atomic-resolution defect contrast in low angle annular dark-field STEM

(2012) P.J. Phillips et al.   ULTRAMICROSCOPY

Bow Free 4'' Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates

(2012) M. R. Jennings et al.   ECS Solid State Letters

SiC epitaxy growth using chloride-based CVD

(2011) Anne Henry et al.   PHYSICA B-CONDENSED MATTER

Saddle-shape warpage of thick 3C-SiC wafer: Effect of nonuniform intrinsic stress and stacking faults

(2011) Yu Sun et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

A new insight on crystalline strain and defect features by STEM–ADF imaging

(2010) V. Grillo et al.   JOURNAL OF CRYSTAL GROWTH

Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation

(2009) Z. F. Di et al.   APPLIED PHYSICS LETTERS

Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures

(2008) G. Melnychuk et al.   JOURNAL OF APPLIED PHYSICS