Journal
CRYSTAL GROWTH & DESIGN
Volume 16, Issue 8, Pages 4467-4472Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.6b00601
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Funding
- MEXT (Japan) program Strategic Molecular and Materials Chemistry through Innovative Coupling Reactions of Hokkaido University
- KAKENHI [2612050205, 15K1411405]
- Grants-in-Aid for Scientific Research [15K05441, 15K14114] Funding Source: KAKEN
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This article reports the growth and characterization of z-axis-oriented NbS2 thin films on SiO2/Si substrate by ambient pressure chemical vapor deposition (CVD) using a generic metal chloride source. We found that NbS2 nanosheets can be grown directly on the SiO2/Si substrate with the aid of hydrogen gas mixed in the carrier gas. Detailed examination Of the growth parameters was made possible using a separate-flow CVD apparatus. It appears that the major cause of the misorientation is the off-stoichiometry with surplus Nb. The quality of the films was evaluated by X-ray diffraction and Raman spectroscopy as well as resistivity measurements at low temperatures. They showed a resistivity minimum at the same temperature of the charge density wave (CDW) transition for a bulk single crystal of 3R-NbS2.
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