4.3 Article

Electrical Conductivity Studies in Sol-Gel-Derived Li-Doped NiO Epitaxial Thin Films

Journal

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.202000330

Keywords

conduction mechanisms; electrical conductivity; hopping conduction; nickel oxide; polarons

Funding

  1. Adaptable and Seamless Technology Transfer Program through Target-driven R&D (A-STEP) from Japan Science and Technology Agency (JST) [AS3015018R]

Ask authors/readers for more resources

The electrical properties of transparent Li-doped nickel oxide (NiO) epitaxial thin films grown on MgO (100) substrates using a sol-gel spin-coating technique are investigated as to the Li concentration as determined by secondary ion mass spectroscopy. The epitaxial growth of the cubic Li-doped NiO films with a cube-on-cube relationship is confirmed by X-ray diffraction measurements. The electrical conductivity increases superlinearly with increasing Li concentration from 0.028 to 7.5 at%. The temperature dependence of the conductivity and the linear dependence of the activation energy on the mean distance between Li ions suggest that the conductivity can be explained within a hopping conduction framework. However, the significant Hall voltages observed in Hall effect measurements suggest the existence of nonhopping carriers in addition to hopping carriers. The Li concentration dependence of the conductivity cannot be well explained by the widely used model of small polaron hopping in which small polarons conduct through thermally activated hopping between nearest-neighbor Ni sites. Instead, the observed dependence is well explained quantitatively by a model combining polaronic interacceptor hopping and nonhopping conductions. Polaronic interacceptor hopping conduction dominates for Li concentrations below 1 at%, whereas nonhopping conduction dominates for higher Li concentrations.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.3
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Physics, Condensed Matter

Crystal orientations of β-Ga2O3 thin films formed on n-plane sapphire substrates

Shinji Nakagomi, Satoru Kaneko, Yoshihiro Kokubun

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)

Article Physics, Applied

All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

Yoshihiro Kokubun, Shohei Kubo, Shinji Nakagomi

APPLIED PHYSICS EXPRESS (2016)

Article Crystallography

The orientational relationship between monoclinic β-Ga2O3 and cubic NiO

Shinji Nakagomi, Shohei Kubo, Yoshihiro Kokubun

JOURNAL OF CRYSTAL GROWTH (2016)

Article Physics, Condensed Matter

Crystal orientations of β-Ga2O3 thin films formed on c-plane GaN substrate

Shinji Nakagomi, Yoshihiro Kokubun

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2016)

Article Materials Science, Multidisciplinary

NiO films grown epitaxially on MgO substrates by sol-gel method

Yoshihiro Kokubun, Yuta Amano, Yasuhiro Meguro, Shinji Nakagomi

THIN SOLID FILMS (2016)

Article Materials Science, Multidisciplinary

Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios

Shinji Nakagomi, Keisuke Hiratsuka, Yoshinori Kakuda, Kokubun Yoshihiro

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)

Article Crystallography

Crystal orientation of monoclinic β-Ga2O3 thin films formed on cubic MgO substrates with a γ-Ga2O3 interfacial layer

Shinji Nakagomi, Yoshihiro Kokubun

JOURNAL OF CRYSTAL GROWTH (2017)

Article Materials Science, Multidisciplinary

β-Ga2O3/p-Type 4H-SiC Heterojunction Diodes and Applications to Deep-UV Photodiodes

Shinji Nakagomi, Toshihide Sakai, Kentaro Kikuchi, Yoshihiro Kokubun

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2019)

Article Physics, Applied

Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction

Shinji Nakagomi, Toshihiro Momo, Syuhei Takahashi, Yoshihiro Kokubun

APPLIED PHYSICS LETTERS (2013)

Article Materials Science, Multidisciplinary

Cross-sectional TEM imaging of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrates

Shinji Nakagomi, Yoshihiro Kokubun

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2013)

Article Physics, Condensed Matter

Crystal orientations of β-Ga2O3 thin films formed on m-plane and r-plane sapphire substrates

Shinji Nakagomi, Satoru Kaneko, Yoshihiro Kokubun

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)

Article Chemistry, Analytical

Hydrogen gas sensor with self temperature compensation based on β-Ga2O3 thin film

Shinji Nakagomi, Tsubasa Sai, Yoshihiro Kokubun

SENSORS AND ACTUATORS B-CHEMICAL (2013)

Article Physics, Condensed Matter

Crystal Orientation of Cubic NiO Thin Films Formed on Monoclinic β-Ga2O3 Substrates

Shinji Nakagomi, Takashi Yasuda, Yoshihiro Kokubun

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)

Article Physics, Condensed Matter

Magnesium Diffusion from MgO Substrates in Sol-Gel-Derived NiO Epitaxial Films: Effects of Heat Treatment Temperature and Li Doping

Yoshihiro Kokubun, Masato Koyanagi, Shinji Nakagomi

Summary: The study found that heat treatment temperature and Li doping have significant effects on the structural properties of NiO epitaxial films, with undoped films showing increased lattice parameters and bandgap at higher treatment temperatures. Li doping reduces the increase in lattice parameter and bandgap observed at high heat treatment temperatures.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2021)

No Data Available