Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer

出版年份 2020 全文链接

标题

作者

关键词

Multilevel resistive switching, ZrO, 2, thin film, Amorphous-ZTO layer, Schottky barrier effect, Improved endurance performance

出版物

Volume 835, Issue -, Pages 155256

出版商

Elsevier BV

发表日期

2020-04-23

DOI

10.1016/j.jallcom.2020.155256

联系作者

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started