III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications

Published 2020 View Full Article

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Title
III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications
Authors
Keywords
Band-to-band tunneling (BTBT), Heterojunction, Source pocket, Sub-threshold swing (SS), Tunnel field effect transistor (TFET)
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 142, Issue -, Pages 106494
Publisher
Elsevier BV
Online
2020-04-09
DOI
10.1016/j.spmi.2020.106494

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