Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 826, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.154198
Keywords
Graphene/SiC film; Epitaxial; Laser CVD; Electrical conductivity; Deposition rate
Categories
Funding
- Ministry of Education for Pre-research of Equipment [6141A02022257]
- Science Challenge Project [TZ2016001]
- National Natural Science Foundation of China [51861145306, 51872212, 51972244]
- 111 Project [B13035]
- International Science & Technology Cooperation Program of China [2018YFE0103600, 2014DFA53090]
- Technological Innovation of Hubei Province, China [2019AAA030]
- Fundamental Research Funds for the Central Universities [WUT: 2018YS003, 2018YS016, 2019III030, 2019III028]
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (WUT) [2019-KF-12]
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High electrical conductivity graphene/epitaxial-3C-SiC (G/epi-3C-SiC) composite films have the potential to the applications such as micro-electro-mechanical systems, distributed Bragg reflectors, solar cells, and photocatalysis in harsh environments. In this study, G/epi-3C-SiC composite films were prepared through laser chemical vapor deposition (LCVD) using hexametyldisilane (HMDS) as a safe single precursor. The electrical conductivity (sigma) of the composite films reached 2.23 x 10(4) S/m, which is 2.2 times of the highest sigma reported for G/epi-3C-SiC composite. The deposition rate (R-dep) of the composite film with the highest sigma is 8.2 times of that of the G/epi-3C-SiC with the highest sigma ever reported sigma of the pure epitaxial 3C-SiC film is only 81.2 S/m, which is the lowest value reported to date of 3C-SiC prepared through CVD using HMDS as a single precursor. Elimination of carbon is beneficial for increasing the breakdown field intensity and decreasing the leakage current of heterojunction when epitaxial 3C-SiC is used as semiconductor material. (C) 2020 Elsevier B.V. All rights reserved.
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