Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 35, Issue 7, Pages 7405-7418Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2019.2954819
Keywords
Dynamic R-dson; gallium nitride (GaN); loss analysis; loss measurement; loss modeling; wide bandgap (WBG)
Categories
Funding
- Canada Excellence Research Chairs Program
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In recent years, there has been a trend for improved performance in semiconductor switches, allowing power electronic systems to achieve higher efficiency and higher power density. This desired improvement has led to the adoption of wide-bandgap devices-based switches due to the fact that silicon (Si) has been reaching its material limit. Si carbide and gallium nitride (GaN) offer faster switching speeds. Therefore, they require higher level measurement technologies to analyze them. In this article, the theoretical loss breakdown of a GaN-based power electronic system is presented including an analysis of its dynamic behavior. Several methods of measurement are presented to quantify the behavior of fast switching.
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