Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs

出版年份 2020 全文链接

标题

作者

关键词

出版物

Volume 67, Issue 6, Pages 2311-2317

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-05-09

DOI

10.1109/ted.2020.2989421

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