Article
Engineering, Electrical & Electronic
Yin Zeng, Jorgen Stenarson, Peter Sobis, Niklas Wadefalk, Jan Grahn
Summary: This article characterizes the RF and noise performance of cryogenic InP HEMT LNA under ultralow-power operation at 4 K. A hybrid cryogenic HEMT LNA designed for qubit readout with lowest noise below 1 mW dc power consumption was fabricated. The measured performance at 4 K shows an average gain of 23.1 dB and an average noise temperature of 2.0 K at 200 μW dc power.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2023)
Article
Engineering, Electrical & Electronic
Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti, Arsalan Pourkabirian, Jorgen Stenarson, Junjie Li, Dae-Hyun Kim, Jan Grahn
Summary: The impact of channel composition on the cryogenic low-noise performance of a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor (HEMT) was studied. Increasing the transconductance to gate-source capacitance ratio in the weak inversion region was found to be important for cryogenic low-noise optimization. The HEMT noise performance was obtained from noise measurements in a low-noise amplifier (LNA) at reduced dc power dissipation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Giacomo Graziano, Alberto Ferraris, Eunjung Cha, Cezar B. Zota
Summary: The recent developments in quantum computing architectures have sparked interest in cryogenic low-noise amplifiers (LNAs) due to their role in quantum bit readout chains. The integration of thousands of LNAs with minimal power dissipation and low noise is crucial for advanced quantum computers with many qubits. However, the self-heating and heat dissipation of cryogenic LNAs still represent limiting factors in their performance and integration.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Instruments & Instrumentation
A. M. Korolev, V. M. Shulga, O. G. Turutanov
Summary: An ultra-low-voltage crystal quartz oscillator design is proposed, utilizing a HEMT and quartz resonator to achieve stable oscillations with power consumption as low as 300 nW, suitable for ultra-low power radio devices.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2021)
Article
Engineering, Electrical & Electronic
Junjie Li, Arsalan Pourkabirian, Johan Bergsten, Niklas Wadefalk, Jan Grahn
Summary: In this study, InP HEMTs with different spacer thicknesses (1 to 7 nm) were fabricated and characterized. The electrical dc and rf properties of the InP HEMTs were evaluated at 5 K. The lowest average noise temperature was achieved by the InP HEMTs with a 5 nm spacer thickness in the 4-8 GHz frequency range. The spacer thickness was found to influence the noise performance of the InP HEMTs by controlling the real-space transfer of electrons.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yao Chen, Lin-An Yang, Zhi Jin, Yong-Bo Su, Yue Hao
Summary: DC performances of depletion-mode 100 nm In0.53Ga0.47As/InP HEMT integrated on a silicon substrate through SiO2-SiO2 bonding were studied via numerical simulation. The fixed charges at the InP/SiO2 interface have the most significant impact on the HEMT characteristics. Increasing the density of negative fixed charges at this interface leads to a shift in threshold voltage, a decrease in output current, and an increase in breakdown voltage. Adjusting the thickness of the InP layer may help mitigate the effects of fixed charges on the HEMT performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Mahdi Vadizadeh, Mohammad Fallahnejad, Maryam Shaveisi, Reyhaneh Ejlali, Farshad Bajelan
Summary: The manuscript proposes a novel double gate double-channel AlGaN/GaN MOS high electron mobility transistor (DG-DC-MOS-HEMT) for low noise amplifier (LNA) applications. Through TCAD device simulations, the importance of double-channel structure on high-frequency noise and analog/RF performance of AlGaN/GaN HEMT has been explored. The DG-DC-MOS-HEMT exhibits improved transconductance, unity gain cut-off frequency, and minimum noise figure compared to DG-MOS-HEMT. Furthermore, an LNA using DG-DC-MOS-HEMT has been designed for the first time in this paper, demonstrating an increase in noise figure and forward voltage gain compared to LNA using DG-MOS-HEMT.
Article
Engineering, Electrical & Electronic
M. S. Nazir, A. H. Pampori, R. Dangi, S. A. Ahsan, Y. S. Chauhan
Summary: In this study, a charge-based model is proposed to describe the flicker/low-frequency noise behavior in GaN HEMTs. The model effectively captures this noise across a wide temperature range, from sub-threshold to above-threshold, including low-temperature conditions, and has been validated against experimental data.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Condensed Matter
Ahmad Salmanogli
Summary: This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. The small-signal nonlinear model of the transistor at 5 K is analyzed using quantum theory, and the total quantum Hamiltonian of the system is derived. The main result shows that the squeezed state can be generated and manipulated by the transistor's nonlinearity.
JOURNAL OF SEMICONDUCTORS
(2023)
Article
Engineering, Electrical & Electronic
Manishankar Prasad Gupta, Sandeep Kumar, Elizabeth Caroline, Hanjung Song, Vijay Kumar, Pradeep Gorre
Summary: This work presents a GaN HEMT device to circuit approach towards low noise amplifier (LNA) using defective ground bias (DGB) technique. This is the first MMIC GaN HEMT LNA design to offer dual-band of operation in both L and S-bands to the author's best knowledge. The proposed 0.15-μm GaN HEMT device fabrication achieves a high output power of 20 W using slot radiation phenomenon. The proposed DGB technique consists of gate and drain biasing topologies which achieves a dual-band of operation using microwave approach. The DGB technique is incorporated into GaN HEMT LNA which achieves high input and output power with good stability.
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
(2023)
Article
Engineering, Electrical & Electronic
Kateryna Smirnova, Christian Bohn, Mehmet Kaynak, Ahmet Cagri Ulusoy
Summary: This letter introduces a power consumption reduction aspect for a 100-GHz low-noise amplifier (LNA). Two designs implemented in 0.13-μm SiGe BiCMOS technology demonstrate state-of-the-art performance, with P-DC reduced from 23.5 mW to 3.8 mW for the low-power version. Both circuits exhibit a measured gain of 22 and 16 dB, and a noise figure of 4 and 6.3 dB at 100 GHz. The occupied IC area is 0.018 and 0.014 mm² in both cases, making it the most compact design in the frequency range of interest.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)
Article
Physics, Multidisciplinary
Qi-Wei Li, Jing Sun, Fu-Xing Li, Chang-Chun Chai, Jun Ding, Jin-Yong Fang
Summary: This paper investigates the damage effect characteristics of GaAs pHEMT under the irradiation of C band high-power microwave. The study establishes a thermoelectric coupling model and predicts key damage parameters of the device under typical pulse conditions. Experimental results show that the gate metal in the first stage of the device is vulnerable to HPM damage, especially the side below the gate near the source. The research provides valuable insights for microwave damage assessment of pHEMT.
Article
Engineering, Electrical & Electronic
Vikas Chauhan, Nadine Collaert, Piet Wambacq
Summary: This letter presents a D-band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA demonstrates high gain and wide bandwidth in the frequency range, and substrate wave suppression techniques have been employed.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Hyun Bae Ahn, Hong-Gu Ji, Yunho Choi, Sanghun Lee, Dong Min Kang, Junghwan Han
Summary: This letter presents a GaN-based three-stage low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) that can be applied to the fifth-generation (5G) new radio base station applications. The design utilizes a hybrid matching topology with double-shunt capacitors to achieve broad return loss and bandwidth characteristics across 5G frequency range.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)
Article
Computer Science, Information Systems
Hyunbae Ahn, Honggu Ji, Dongmin Kang, Sung-Min Son, Sanghun Lee, Junghwan Han
Summary: This article presents the design of a 26-30 GHz gallium nitride high electron mobility transistor low-noise amplifier for fifth-generation base station applications. The proposed design utilizes a series inductor-based stability enhancement technique. Experimental results demonstrate that the design achieves high gain and stability, meeting the requirements for base station applications.
Article
Engineering, Electrical & Electronic
Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti, Arsalan Pourkabirian, Jorgen Stenarson, Junjie Li, Dae-Hyun Kim, Jan Grahn
Summary: The impact of channel composition on the cryogenic low-noise performance of a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor (HEMT) was studied. Increasing the transconductance to gate-source capacitance ratio in the weak inversion region was found to be important for cryogenic low-noise optimization. The HEMT noise performance was obtained from noise measurements in a low-noise amplifier (LNA) at reduced dc power dissipation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Junjie Li, Arsalan Pourkabirian, Johan Bergsten, Niklas Wadefalk, Jan Grahn
Summary: This study fabricates and characterizes 4-8 GHz low-noise amplifiers (LNAs) based on InP HEMTs, with different spacer thicknesses in the InAlAs-InGaAs heterostructure, at 5 K. The results show that the lowest average noise temperature of the LNA varies with the spacer thickness. Additionally, the subthreshold swing (SS) of the HEMT at 5 K exhibits a similar dependence on the spacer thickness as the lowest average noise temperature of the LNA. This suggests that the low-temperature characterization of SS in the HEMT can be used as a quick assessment of the anticipated noise performance in the cryogenic HEMT LNA.
2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC)
(2022)
Article
Engineering, Electrical & Electronic
Junjie Li, Arsalan Pourkabirian, Johan Bergsten, Niklas Wadefalk, Jan Grahn
Summary: In this study, InP HEMTs with different spacer thicknesses (1 to 7 nm) were fabricated and characterized. The electrical dc and rf properties of the InP HEMTs were evaluated at 5 K. The lowest average noise temperature was achieved by the InP HEMTs with a 5 nm spacer thickness in the 4-8 GHz frequency range. The spacer thickness was found to influence the noise performance of the InP HEMTs by controlling the real-space transfer of electrons.
IEEE ELECTRON DEVICE LETTERS
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
J. Grahn, E. Cha, A. Pourkabirian, J. Stenarson, N. Wadefalk
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
(2020)
