Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 8, Pages 1233-1236Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3001977
Keywords
Silicon; Etching; Pressure sensors; Skin; Substrates; Metals; Resistance; Pressure sensor; metal-assisted chemical etching; silicon nanowire; piezoresistance
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2018R1D1A1B07048610]
- National Research Foundation of Korea [2018R1D1A1B07048610] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This letter presents a flexible pressure sensor based on silicon nanowires (Si NWs) built by metal-assisted chemical (MAC) etching. The MAC etched NWs, with a height of 30 mu m and a diameter as small as 200 nm, were post-treated with polydimethylsiloxane to endow the NW sensor with elasticity and high-pressure resistance. The piezoresistance of the Si NWs varies from 1.03x10(6) to 5.3x 104 ohms as the applied pressure changes from0 to 4.5 kPa, indicating a resistance change rate of about 94%. The Si NW sensor also exhibits a fast response and recovery time as 0.3 s, it is capable of distinguishing pressure changes as lowas 0.3kPa, which isway lower than the perceivable range (10-40kPa) of human skin.
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