Journal
CHEMSUSCHEM
Volume 13, Issue 20, Pages 5433-5442Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cssc.202001504
Keywords
atomic layer deposition; chemical vapor deposition; metal-organic frameworks; physical layer deposition; thin films
Funding
- Army Research Office [W911NF1710214]
- 9 month grant through their Short-Term Innovative Research (STIR) Program
- Department of Energy Basic Energy Sciences [DE-SC0018116]
- Welch Foundation [F-1436]
- Dorothy Banks Fellowship
- U.S. Department of Defense (DOD) [W911NF1710214] Funding Source: U.S. Department of Defense (DOD)
- U.S. Department of Energy (DOE) [DE-SC0018116] Funding Source: U.S. Department of Energy (DOE)
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Deposition of materials as a thin film is important for various applications, such as sensors, microelectronic devices, and membranes. There have been breakthroughs in gas-phase metal-organic framework (MOF) thin-film growth, which is more applicable to micro- and nanofabrication processes and also less harmful to the environment than solvent-based methods. Three different types of gas-phase MOF thin film deposition methods have been developed using chemical vapor deposition (CVD), atomic layer deposition (ALD), and physical vapor deposition (PVD)-CVD combined techniques. The CVD-based method basically converts metal oxide layers into MOF thin films by exposing the surface to ligand vapor. The ALD-based method allows growing MOF thin films following layer-by-layer (LBL) growth by sequentially exposing gas-phase metal and ligand precursors. The PVD-CVD method uses PVD for metal deposition and CVD for ligand deposition, which is similar to LBL growth. These gas-phase growth methods can broaden the use of MOFs in diverse areas. Herein, the current progress of gas-phase MOF thin film growth is discussed and future directions suggested.
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