Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption

Published 2016 View Full Article

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Title
Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption
Authors
Keywords
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Journal
Chinese Physics B
Volume 25, Issue 6, Pages 066105
Publisher
IOP Publishing
Online
2016-06-02
DOI
10.1088/1674-1056/25/6/066105

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