Morphological, Optical, and Electrical Properties of p-Type Nickel Oxide Thin Films by Nonvacuum Deposition

In this study, a p-type 2 at% lithium-doped nickel oxide (abbreviation L2NiO) solution was prepared using Ni(NO3)(2).6H(2)O, and LiNO3.12NiO thin films were deposited using an atomizer by spraying the L2NiO solution onto a glass substrate. The sprayed specimen was heated at a low temperature (140 degrees C) and annealed at different high temperatures and times. This method can reduce the evaporation ratio of the L2NiO solution, affording high-order nucleating points on the substrate. The L2NiO thin films were characterized by X-ray diffraction, scanning electron microscopy, UV-visible spectroscopy, and electrical properties. The figure of merit (FOM) for L2NiO thin films was calculated by Haacke's formula, and the maximum value was found to be 5.3 x 10(-6) Omega(-1). FOM results revealed that the L2NiO thin films annealed at 600 degrees C for 3 h exhibited satisfactory optical and electrical characteristics for photoelectric device applications. Finally, a transparent heterojunction diode was successfully prepared using the L2NiO/indium tin oxide (ITO) structure. The current-voltage characteristics revealed that the transparent heterojunction diode exhibited rectifying properties, with a turn-on voltage of 1.04 V, a leakage current of 1.09 x 10(-4) A/cm(2) (at 1.1 V), and an ideality factor of n = 0.46.