A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain

Published 2020 View Full Article

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Title
A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2020-04-07
DOI
10.1088/1361-6641/ab8702

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