A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain

标题
A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume -, Issue -, Pages -
出版商
IOP Publishing
发表日期
2020-04-07
DOI
10.1088/1361-6641/ab8702

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