Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Published 2020 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices
Authors
Keywords
4H-silicon carbide-on-insulator platform, Wafer-scale, Ion-cutting and layer transferring, Surface blistering, Nonlinear optical device
Journal
OPTICAL MATERIALS
Volume -, Issue -, Pages 109990
Publisher
Elsevier BV
Online
2020-05-08
DOI
10.1016/j.optmat.2020.109990

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.