Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

出版年份 2020 全文链接

标题

作者

关键词

4H-silicon carbide-on-insulator platform, Wafer-scale, Ion-cutting and layer transferring, Surface blistering, Nonlinear optical device

出版物

Volume -, Issue -, Pages 109990

出版商

Elsevier BV

发表日期

2020-05-08

DOI

10.1016/j.optmat.2020.109990

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