Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors

Published 2020 View Full Article

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Title
Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors
Authors
Keywords
Co, 3, O, 4, MnO, 2, Resistive switching, Magnetization switching, Switching mechanism, Conductive filaments
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 823, Issue -, Pages 153731
Publisher
Elsevier BV
Online
2020-01-10
DOI
10.1016/j.jallcom.2020.153731

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