Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors

出版年份 2020 全文链接

标题

作者

关键词

Co, 3, O, 4, MnO, 2, Resistive switching, Magnetization switching, Switching mechanism, Conductive filaments

出版物

Volume 823, Issue -, Pages 153731

出版商

Elsevier BV

发表日期

2020-01-10

DOI

10.1016/j.jallcom.2020.153731

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