Band gap engineering and low temperature transport phenomenon in highly conducting antimony doped tin oxide thin films

Published 2016 View Full Article

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Title
Band gap engineering and low temperature transport phenomenon in highly conducting antimony doped tin oxide thin films
Authors
Keywords
Transparent Conducting Oxide (TCO), Burstein–Moss (BM) shift, Quantum Confinement, Amorphization, Nearest neighbour hopping (NNH) and Variable Range Hopping (VRH)
Journal
CERAMICS INTERNATIONAL
Volume 42, Issue 5, Pages 5932-5941
Publisher
Elsevier BV
Online
2016-01-01
DOI
10.1016/j.ceramint.2015.12.141

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