Band gap engineering and low temperature transport phenomenon in highly conducting antimony doped tin oxide thin films

标题
Band gap engineering and low temperature transport phenomenon in highly conducting antimony doped tin oxide thin films
作者
关键词
Transparent Conducting Oxide (TCO), Burstein–Moss (BM) shift, Quantum Confinement, Amorphization, Nearest neighbour hopping (NNH) and Variable Range Hopping (VRH)
出版物
CERAMICS INTERNATIONAL
Volume 42, Issue 5, Pages 5932-5941
出版商
Elsevier BV
发表日期
2016-01-01
DOI
10.1016/j.ceramint.2015.12.141

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