Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume 67, Issue 4, Pages 620-624Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2019.2923716
Keywords
Memristor; resistive switching; ReRAM; multi-level memory; voltage divider; Knowm; Digilent AD2
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Funding
- Chilean Research Grant CONICYT FONDECYT INICIACION [11180706]
- Chilean Research Grant CONICYT BASAL [FB0008]
- Spanish MINECO [TEC2016-75151-C3-2-R]
- ERDF [TEC2016-75151-C3-2-R]
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Resistive switching devices-memristors-present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.
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