GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Published 2020 View Full Article

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Title
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 5, Pages 689-692
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-04-01
DOI
10.1109/led.2020.2984727

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