One-step regression and classification with cross-point resistive memory arrays

Solving matrix equations in one step with cross-point resistive arrays

(2019) Zhong Sun et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

(2019) Elliot J. Fuller et al.   SCIENCE

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

(2018) Adnan Mehonic et al.   ADVANCED MATERIALS

Equivalent-accuracy accelerated neural-network training using analogue memory

(2018) Stefano Ambrogio et al.   NATURE

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements

(2018) Kibong Moon et al.   IEEE Journal of the Electron Devices Society

Logic Computing with Stateful Neural Networks of Resistive Switches

(2018) Zhong Sun et al.   ADVANCED MATERIALS

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

(2018) Elia Ambrosi et al.   FARADAY DISCUSSIONS

Sparse coding with memristor networks

(2017) Patrick M. Sheridan et al.   Nature Nanotechnology

A novel true random number generator based on a stochastic diffusive memristor

(2017) Hao Jiang et al.   Nature Communications

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

(2017) G. Pedretti et al.   Scientific Reports

TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

(2016) Jaesung Park et al.   IEEE ELECTRON DEVICE LETTERS

Resistance random access memory

(2016) Ting-Chang Chang et al.   Materials Today

Stochastic phase-change neurons

(2016) Tomas Tuma et al.   Nature Nanotechnology

Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations

(2016) Tayfun Gokmen et al.   Frontiers in Neuroscience

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

(2015) Geoffrey W. Burr et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

(2015) Simone Balatti et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Logic Computation in Phase Change Materials by Threshold and Memory Switching

(2013) M. Cassinerio et al.   ADVANCED MATERIALS

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Efficient and effective algorithms for training single-hidden-layer neural networks

(2011) Dong Yu et al.   PATTERN RECOGNITION LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE