Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Title
Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process
Authors
Keywords
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Journal
Crystals
Volume 10, Issue 2, Pages 141
Publisher
MDPI AG
Online
2020-02-25
DOI
10.3390/cryst10020141

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