Design, Analysis, and Discussion of Short Circuit and Overload Gate-Driver Dual-Protection Scheme for 1.2-kV, 400-A SiC MOSFET Modules

Published 2019 View Full Article

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Title
Design, Analysis, and Discussion of Short Circuit and Overload Gate-Driver Dual-Protection Scheme for 1.2-kV, 400-A SiC MOSFET Modules
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 35, Issue 3, Pages 3054-3068
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-07-23
DOI
10.1109/tpel.2019.2930048

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