Effects of Oxidants on the Bias-Stress Instabilities of In-Ga-Zn-O Thin Film Transistors Using HfO2 Gate Insulator Prepared by Atomic Layer Deposition

Published 2020 View Full Article

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Title
Effects of Oxidants on the Bias-Stress Instabilities of In-Ga-Zn-O Thin Film Transistors Using HfO2 Gate Insulator Prepared by Atomic Layer Deposition
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 3, Pages 425-428
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-02-01
DOI
10.1109/led.2020.2970751

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