Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation

Published 2019 View Full Article

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Title
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 1, Pages 19-22
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-11-06
DOI
10.1109/led.2019.2951655

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