Journal
CHINESE PHYSICS B
Volume 29, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/ab6c48
Keywords
GaN; porous template; stress
Categories
Funding
- National Key R&D Program of China [2017YFB0404201]
- State Key R&D Program of Jiangsu Province, China [BE2019103]
- Six-Talent Peaks Project of Jiangsu Province, China [XCL-107]
- Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center
- State Grid Shandong Electric Power Company
- PAPD
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The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy (HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence (PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from beta-Ga2O3 film as a novel promising template is suitable for the growth of stress-free GaN films.
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