Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors

Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation

(2019) Shahadat H. Sohel et al.   IEEE ELECTRON DEVICE LETTERS

X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

(2018) Shahadat H. Sohel et al.   IEEE ELECTRON DEVICE LETTERS

N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

(2017) Steven Wienecke et al.   IEEE ELECTRON DEVICE LETTERS

Linearity Enhancement of a Fully Integrated 6-GHz GaN Power Amplifier

(2017) Pilsoon Choi et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

(2017) Sanyam Bajaj et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors

(2016) Jacob B. Khurgin et al.   Applied Physics Express

N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz

(2016) Steven Wienecke et al.   IEEE ELECTRON DEVICE LETTERS