Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

Title
Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
Authors
Keywords
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Journal
TECHNICAL PHYSICS
Volume 64, Issue 10, Pages 1492-1500
Publisher
Pleiades Publishing Ltd
Online
2019-10-14
DOI
10.1134/s1063784219100268

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