Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 217, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201900687
Keywords
GaN; low on-resistance; low trapping effects; silicon; superlattices
Funding
- French RENATECH network
- European Union [720527]
- French National grant [ANR-16-CE05-0022-01]
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Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without generating additional trapping effects as compared with a more standard optimized step-graded AlGaN-based epistructure using a similar total buffer thickness. DC characterizations of fabricated transistors by means of back-gating measurements reflect both the enhancement of the breakdown voltage and the low trapping effects up to 1200 V. These results show that a proper buffer optimization and the insertion of SL pave the way to GaN-on-Si lateral power transistors operating at 1200 V with low on-resistance and low trapping effects.
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