Lateral InSe p–n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells

Published 2019 View Full Article

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Title
Lateral InSe p–n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells
Authors
Keywords
-
Journal
Journal of Physical Chemistry Letters
Volume 10, Issue 24, Pages 7712-7718
Publisher
American Chemical Society (ACS)
Online
2019-11-26
DOI
10.1021/acs.jpclett.9b03184

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