Lateral InSe p–n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells

标题
Lateral InSe p–n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells
作者
关键词
-
出版物
Journal of Physical Chemistry Letters
Volume 10, Issue 24, Pages 7712-7718
出版商
American Chemical Society (ACS)
发表日期
2019-11-26
DOI
10.1021/acs.jpclett.9b03184

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