Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

(2012) H. Jussila et al.   JOURNAL OF APPLIED PHYSICS

GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

(2012) O. Skibitzki et al.   JOURNAL OF APPLIED PHYSICS

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

(2011) S. Liebich et al.   APPLIED PHYSICS LETTERS

Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

(2011) W. Guo et al.   APPLIED SURFACE SCIENCE

Interpretation of the two-components observed in high resolution X-ray diffraction ω scan peaks for mosaic ZnO thin films grown on c-sapphire substrates using pulsed laser deposition

(2011) O. Durand et al.   THIN SOLID FILMS

Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy

(2010) Yasufumi Takagi et al.   JOURNAL OF APPLIED PHYSICS

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

(2010) Keisuke Yamane et al.   JOURNAL OF CRYSTAL GROWTH

Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy

(2010) Henning Döscher et al.   JOURNAL OF CRYSTAL GROWTH

GaP-nucleation on exact Si (001) substrates for III/V device integration

(2010) Kerstin Volz et al.   JOURNAL OF CRYSTAL GROWTH

X-ray study of antiphase domains and their stability in MBE grown GaP on Si

(2010) A. Létoublon et al.   JOURNAL OF CRYSTAL GROWTH

Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

(2009) T. J. Grassman et al.   APPLIED PHYSICS LETTERS

Ways to quantitatively detect antiphase disorder in GaP films grown on Si(001) by transmission electron microscopy

(2008) I. Németh et al.   JOURNAL OF CRYSTAL GROWTH

Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si

(2008) V.K. Dixit et al.   JOURNAL OF CRYSTAL GROWTH

III–V epitaxy on Si for photonics applications

(2008) Hiroo Yonezu et al.   JOURNAL OF CRYSTAL GROWTH

Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

(2008) Keisuke Yamane et al.   JOURNAL OF CRYSTAL GROWTH

Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

(2008) B. Kunert et al.   THIN SOLID FILMS

Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

(2007) I. Németh et al.   JOURNAL OF CRYSTAL GROWTH