Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

标题
Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume -, Issue -, Pages -
出版商
Japan Society of Applied Physics
发表日期
2019-11-26
DOI
10.7567/1347-4065/ab5b68

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