Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Published 2019 View Full Article

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Title
Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 11, Pages 4591-4596
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-10-18
DOI
10.1109/ted.2019.2940749

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