Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

出版年份 2019 全文链接

标题

作者

关键词

出版物

Volume 66, Issue 11, Pages 4591-4596

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2019-10-18

DOI

10.1109/ted.2019.2940749

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