Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 11, Pages 4710-4715Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2939482
Keywords
Memristors; Switches; Resistance; Zinc oxide; Multivalued logic; II-VI semiconductor materials; Modulation; Memristor; multi-state switching; nonvolatile; ternary logic
Funding
- NSFC [61871244, 61874078, 61722407, 61674153, 51525103]
- National Key Research and Development Program of China [2017YFB0405604]
- Natural Science Foundation of Zhejiang Province [LY18F040002, LR17E020001]
- K. C. Wong Magna Fund in Ningbo University, China
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Memristors with small size, fast speed, low power, CMOS compatibility and nonvolatile modulation of device resistance are promising candidates for the next-generation data storage and in-memory logic computing paradigm. In comparison to the binary logics enabled by memristor devices, multi-valued logics can provide higher computation efficiency with simple operation scheme, reduced circuit complexity, and smaller chip area. In this contribution, we demonstrate that all the 27 univariate ternary logic operations can be realized with a single ZnO three-state resistive switching memristor in at most three steps. The nonvolatile modulation characteristics of the memristor allow the read step to be independent of the logic operation and capacitate logic-in-memory applications. The present methodology could be beneficial for constructing future high-performance computation architectures.
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