4.6 Article

Implementation of All 27 Possible Univariate Ternary Logics With a Single ZnO Memristor

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 11, 页码 4710-4715

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2939482

关键词

Memristors; Switches; Resistance; Zinc oxide; Multivalued logic; II-VI semiconductor materials; Modulation; Memristor; multi-state switching; nonvolatile; ternary logic

资金

  1. NSFC [61871244, 61874078, 61722407, 61674153, 51525103]
  2. National Key Research and Development Program of China [2017YFB0405604]
  3. Natural Science Foundation of Zhejiang Province [LY18F040002, LR17E020001]
  4. K. C. Wong Magna Fund in Ningbo University, China

向作者/读者索取更多资源

Memristors with small size, fast speed, low power, CMOS compatibility and nonvolatile modulation of device resistance are promising candidates for the next-generation data storage and in-memory logic computing paradigm. In comparison to the binary logics enabled by memristor devices, multi-valued logics can provide higher computation efficiency with simple operation scheme, reduced circuit complexity, and smaller chip area. In this contribution, we demonstrate that all the 27 univariate ternary logic operations can be realized with a single ZnO three-state resistive switching memristor in at most three steps. The nonvolatile modulation characteristics of the memristor allow the read step to be independent of the logic operation and capacitate logic-in-memory applications. The present methodology could be beneficial for constructing future high-performance computation architectures.

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