Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting

Origin of Low Carrier Mobilities in Halide Perovskites

(2019) Samuel Poncé et al.   ACS Energy Letters

Table of contents

(2018)   IEEE ELECTRON DEVICE LETTERS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

GaN/NbN epitaxial semiconductor/superconductor heterostructures

(2018) Rusen Yan et al.   NATURE

Parametric amplification of optical phonons

(2018) A. Cartella et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

(2017) Masahiro Horita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Advanced capabilities for materials modelling with Quantum ESPRESSO

(2017) P Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electron-phonon interactions from first principles

(2017) Feliciano Giustino   REVIEWS OF MODERN PHYSICS

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

(2017) P Sohi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

EPW: Electron–phonon coupling, transport and superconducting properties using maximally localized Wannier functions

(2016) S. Poncé et al.   COMPUTER PHYSICS COMMUNICATIONS

GaN Technology for Power Electronic Applications: A Review

(2016) Tyler J. Flack et al.   JOURNAL OF ELECTRONIC MATERIALS

Brittle fracture toughnesses of GaN and AlN from first-principles surface-energy calculations

(2015) C. E. Dreyer et al.   APPLIED PHYSICS LETTERS

Electrical transport limited by electron-phonon coupling from Boltzmann transport equation: Anab initiostudy of Si, Al, andMoS2

(2015) Wu Li   PHYSICAL REVIEW B

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions

(2014) Arash A. Mostofi et al.   COMPUTER PHYSICS COMMUNICATIONS

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

(2014) Erin C. H. Kyle et al.   JOURNAL OF APPLIED PHYSICS

Neutron detection using boron gallium nitride semiconductor material

(2014) Katsuhiro Atsumi et al.   APL Materials

GaN on Si Technologies for Power Switching Devices

(2013) Masahiro Ishida et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultrafast Strain Engineering in Complex Oxide Heterostructures

(2012) A. D. Caviglia et al.   PHYSICAL REVIEW LETTERS

Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures

(2011) Seoung-Hwan Park   JOURNAL OF APPLIED PHYSICS

Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

(2010) A. Svane et al.   PHYSICAL REVIEW B

Berry phase effects on electronic properties

(2010) Di Xiao et al.   REVIEWS OF MODERN PHYSICS

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

yambo: An ab initio tool for excited state calculations

(2009) Andrea Marini et al.   COMPUTER PHYSICS COMMUNICATIONS

Thermoelectric properties of InxGa1−xN alloys

(2008) B. N. Pantha et al.   APPLIED PHYSICS LETTERS

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B