Neutron detection using boron gallium nitride semiconductor material

Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers

(2013) Yohei Fujita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Present status of microstructured semiconductor neutron detectors

(2013) Douglas S. McGregor et al.   JOURNAL OF CRYSTAL GROWTH

Improving quantitative neutron radiography through image restoration

(2013) D.S. Hussey et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Novel Application of Neutron Radiography to Forced Convective Drying of Fruit Tissue

(2012) Thijs Defraeye et al.   Food and Bioprocess Technology

Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates

(2010) Masatomo Sumiya et al.   APPLIED SURFACE SCIENCE

Deep structural analysis of novel BGaN material layers grown by MOVPE

(2010) S. Gautier et al.   JOURNAL OF CRYSTAL GROWTH

Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers

(2009) Hisashi Matsumura et al.   Applied Physics Express

Bandgap bowing in BGaN thin films

(2008) A. Ougazzaden et al.   APPLIED PHYSICS LETTERS

Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE

(2008) G. Orsal et al.   JOURNAL OF CRYSTAL GROWTH